SEMICONDUCTOR DEVICES HAVING FINS, AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING FINS
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United States of America Patent
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May 16, 2016
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Jun 18, 2014
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Abstract
In forming a finFET, a selective nitridation process is used during spacer formation on the gate to support a finer fin pitch than could be achieved using traditional spacer deposition processes. The spacer formation may also allow precise control over formation of source and drain junctions.
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