High Voltage Device with a Parallel Resistor
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United States of America Patent
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Sep 8, 2016
app pub date -
Mar 4, 2015
filing date -
Mar 4, 2015
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Abstract
A high voltage semiconductor device includes: a source having a first conductivity type and a drain having the first conductivity type disposed in a substrate; a first dielectric component disposed on a surface of the substrate between the source and the drain; a drift region disposed in the substrate, wherein the drift region has the first conductivity type; a first doped region having a second conductivity type and disposed within the drift region under the dielectric component, the second conductivity type being opposite the first conductivity type; a second doped region having the second conductivity type and disposed within the drift region, wherein the second doped region at least partially surrounds one of the source and the drain; a resistor disposed directly on the dielectric component; and a gate disposed directly on the dielectric component, wherein the gate is electrically coupled to the resistor.
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