METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Sep 8, 2016
app pub date -
Mar 30, 2015
filing date -
Mar 3, 2015
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, and a third region defined thereon; forming a plurality of fin-shaped structures on the first region, the second region, and the third region of the substrate; performing a first fin-cut process to form a first fin-shaped structure on the first region, a second fin-shaped structure on the second region, and a third fin-shaped structure on the third region, wherein the height of the first fins-shaped structure is different from the heights of the second fin-shaped structure and the third fin-shaped structure; and performing a second fin-cut process to lower the height of the third fin-shaped structure.
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