ADHESION IMPROVEMENTS FOR OXIDE-SILICON STACK

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United States of America Patent

APP PUB NO 20160260602A1
SERIAL NO

14400735

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Abstract

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Embodiments generally relate to methods of controlling hydrogen content in a silicon oxide/amorphous silicon stack. By precleaning the substrate of residues, controlling the delivery of hydrogen during the stack deposition and preventing outgassing of hydrogen from deposited layers during subsequent layer deposition and processing, the effects of delamination can be avoided in the formation of devices, such as 3D NAND devices.

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Patent Owner(s)

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APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Bok Hoen San Jose, US 114 6548
RAJAGOPALAN, Nagarajan Santa Clara, US 38 1836
SREEKALA, Subbalakshmi Milpitas, US 4 43

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