POLISHING COMPOSITION AND POLISHING PROCESSING METHOD USING SAME
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United States of America Patent
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Aug 12, 2014
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Oct 22, 2013
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A polishing composition contains polishing particles and a polishing liquid used in polishing processing for smoothing a (0001)Si plane of a SiC single crystal used as an object to be polished, the polishing liquid is an oxidizing polishing liquid, and a relationship between pH of the polishing composition and an off-angle of the (0001)Si plane of the SiC single crystal is located within a range surrounded by four straight lines represented by following equations (1), (2), (3), and (4) in two-dimensional x-y coordinates where the off-angle (°) and the pH of the polishing composition are indicated by x and y, respectively: y=4 (1); y=3 (2); x=0 (3); and x=8 (4).
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