Method of fabricating MEMS devices using plasma etching and device therefor
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United States of America Patent
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Feb 9, 2021
Grant Date -
Sep 8, 2016
app pub date -
Mar 13, 2015
filing date -
Mar 7, 2013
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Abstract
A method for fabricating a MEMS sensor device. The method can include providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure.
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