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Abstract

A semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an electrode structure of a first semiconductor chip which is provided on a first surface of an n⁺-type semiconductor layer of the semiconductor substrate to be electrically connected to the semiconductor element and in which a first Al metal layer composed of Al or Al alloy, a Cu diffusion-prevention layer, a second Al metal layer composed of Al or Al alloy, and a Ni layer are formed in this order, and a conductive member which is bonded to the electrode structure of the first semiconductor chip via a sintered copper layer disposed on a surface of the Ni layer. In this semiconductor device, a crystal plane orientation of Al crystal grains on a surface of the second Al metal layer is principally on (110) plane.

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First Claim