GALLIUM NITRIDE POWER DEVICES
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United States of America Patent
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app pub date -
May 9, 2016
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Sep 17, 2007
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Abandoned
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Abstract
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
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