Photoresist with Floating-OOB-Absorption Additive
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United States of America Patent
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Feb 26, 2015
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Feb 26, 2015
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Abstract
Methods and materials for making a semiconductor device are described. The method includes forming an out-of-bond-wavelength (OOB)-reduction photoresist over a substrate, forming a floating region adjacent to a top surface of the OOB-reduction photoresist. The floating region has a higher absorbance of the OOB wavelength than a bulk region of the OOB-reduction photoresist that is below the floating region. The method also includes exposing the OOB-reduction photoresist to a radiation beam, wherein an OOB radiation portion of the radiation beam is absorbed in the floating region.
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