SEMICONDUCTOR DEVICE, PLATING METHOD, PLATING SYSTEM AND RECORDING MEDIUM

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United States of America Patent

APP PUB NO 20160247765A1
SERIAL NO

15047710

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Abstract

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Adhesivity between a catalyst adsorption layer on a substrate and a barrier metal plating layer can be improved. The catalyst adsorption layer 22 containing a catalyst metal is formed on the substrate 2 by supplying a catalyst solution onto the substrate 2, and a bonding metal layer 22A containing a bonding metal different from the catalyst metal is formed on the catalyst adsorption layer 22 by performing a plating process with the catalyst metal as a catalyst. A barrier metal plating layer 23 is formed on the bonding metal layer 22A by performing a plating process with the bonding metal as a catalyst.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inatomi, Yuichiro Nirasaki City, JP 48 369
Iwai, Kazutoshi Nirasaki City, JP 16 9
Iwashita, Mitsuaki Nirasaki City, JP 90 1643
Mizutani, Nobutaka Nirasaki City,, JP 29 33
Saito, Yusuke Koshi City, JP 120 337
Tanaka, Takashi Nirasaki City, JP 320 3377

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