Semiconductor Device and Method of Manufacturing the Same
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United States of America Patent
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Issued Date -
Aug 25, 2016
app pub date -
Dec 5, 2013
filing date -
Dec 5, 2013
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Abstract
A semiconductor device includes: a first silicon section G1 which contains a p-type impurity and is a gate electrode G of a p-channel type MISFET 1P; a second silicon section G2 which contains an n-type impurity and is a gate electrode G of an n-channel type MISFET 2N; and an insulation film IF1 which is interposed between the first silicon section G1 and the second silicon section G2. Then, a silicide film is formed continuously on surfaces of the first silicon section G1, the insulation film IF1 and the second silicon section G2, and the first silicon section G1 and the second silicon section G2 are electrically connected to each other by the silicide film SIL. Impurity inter-diffusion can be prevented by the insulation film IF1.
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