Push-pull bridge-type magnetic sensor for high-intensity magnetic fields
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United States of America Patent
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Jan 2, 2018
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app pub date -
Oct 13, 2014
filing date -
Oct 21, 2013
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Abstract
The present invention provides a push-pull bridge-type magnetic sensor for high-intensity magnetic fields. The sensor comprises two substrates, magnetoresistive sensing elements, push arm attenuators, and pull arm attenuators. Magnetization directions of pinning layers of the magnetoresistive sensing elements located on a same substrate are parallel, and magnetization directions of pinning layers of the magnetoresistive sensing elements on different substrates are anti-parallel, wherein the magnetoresistive sensing elements on one substrate are electrically connected to one another to form push arms of a push-pull bridge, and the magnetoresistive sensing elements on the other substrate are electrically connected to one another to form pull arms of the push-pull bridge. The magnetoresistive sensing elements in the push arms and the pull arms are arranged in columns above or below the push arm attenuators and the pull arm attenuators. The sensor can be implemented in quasi-bridge, half-bridge, or full-bridge structures, and it has the following advantages: low power consumption, small offset, good linearity, wide operation range, the capability to operate in high-intensity magnetic fields, and twice the maximum sensitivity of a single-chip referenced bridge magnetic sensor.
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