Multi-Value Nonvolatile Organic Resistive Random Access Memory and Method for Preparing the Same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 18, 2016
app pub date -
Mar 31, 2014
filing date -
Feb 11, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Disclosed are a multi-value nonvolatile organic resistive random access memory and a method for preparing the same. The resistive random access memory comprises a top electrode, a bottom electrode and a middle functional layer located between the top electrode and the bottom electrode, the middle functional layer is at least two layers of parylene. The method comprises the steps of: growing material for the bottom electrode using physical vapor deposition method on a substrate; growing sequentially multiple layers of parylene on the bottom electrode by polymer chemical vapor deposition; defining the via for leading out the bottom electrode by lithography and etching; growing material for the top electrode on the parylene materials by using physical vapor deposition process, defining the top electrode material by lithography and lift-off, and leading out the bottom electrode.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully