SELF REFERENCE THERMALLY ASSISTED MRAM WITH LOW MOMENT FERROMAGNET STORAGE LAYER
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Apr 28, 2016
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Nov 13, 2013
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A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.
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