THERMOELECTRIC DEVICE
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United States of America Patent
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Aug 18, 2016
app pub date -
Feb 8, 2016
filing date -
Feb 16, 2015
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Abstract
A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.
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