DOUBLE-PASS PHOTODIODE WITH EMBEDDED REFLECTOR

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United States of America Patent

APP PUB NO 20160240718A1
SERIAL NO

15027840

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Abstract

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A photodiode, in particular photodiode for data transmission applications, can include a semiconductor substrate, which can also be referred to as a substrate layer, and a first semiconductor layer supported by, for instance arranged on, the semiconductor substrate. The photodiode can further include a second semiconductor layer supported by, for instance arranged on, the first semiconductor layer. The photodiode can further include an optical semiconductor mirror arranged between the semiconductor substrate and the first semiconductor layer such that when incident light passes through the second semiconductor layer and the first semiconductor layer along a first direction a first time, the incident light is reflected by the optical semiconductor mirror so as to pass through the first semiconductor layer a second time, which can also be referred to as a second pass. Thus, the photodiode can also be referred to as a double-pass photodiode.

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Patent Owner(s)

Patent OwnerAddress
FCI ASIA PTE LTDSINGAPORE SINGAPORE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
GIZIEWICZ, Wojciech Berlin, DE 4 28

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