Importance

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Abstract

An LDMOS device, comprising a substrate (202), a gate electrode (211) on the substrate (202), a buried layer area in the substrate (202), and a diffusion layer on the buried layer area, wherein the buried layer area comprises a first buried layer (201) and a second buried layer (203), wherein the conduction types of impurities doped in the first buried layer (201) and the second buried layer (203) are opposite; the diffusion layer comprises a first diffusion area (205) and a second diffusion area (206), wherein the first diffusion area (205) is located on the first buried layer (201) and abuts against the first buried layer (201), and the second diffusion area (206) is located on the second buried layer (203) and abuts against the second buried layer (203); and the conduction types of impurities doped in the first buried layer (201) and the first diffusion area (205) are the same, and the conduction types of impurities doped in the second buried layer (203) and the second diffusion area (206) are the same. Additionally, also disclosed is a manufacturing method for the LDMOS device. A current path of the device in a conducting state is an area formed by the lower part of the second diffusion area (206) and the second buried layer (203) and is situated away from the surface of the device, so that the current capability of the device can be improved, the turn-on resistance can be reduced, and the reliability of the device can be improved.

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First Claim