Importance

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Abstract

Provided is a method for manufacturing a semiconductor device, which can manufacture a semiconductor device at a high yield ratio by suppressing dissolution of a sheet-shaped resin composition when cleaning a wafer after peeling a supporting member from the wafer. The present invention provides a method for manufacturing a semiconductor device, the method including: a step A of preparing a wafer; a step B of pasting together a second main surface of the wafer and a supporting member including a support and a temporary fixing layer formed on the support with the temporary fixing layer interposed between the second main surface and the supporting member; a step C of preparing a laminate including a dicing tape and an ultraviolet curable sheet-shaped resin composition laminated on the dicing tape; a step D of pasting together a first main surface of the wafer and the sheet-shaped resin composition; a step E of peeling the supporting member from the wafer after the step D; a step F of cleaning the second main surface of the wafer after the step E; and a step S of irradiating a peripheral part of the sheet-shaped resin composition with ultraviolet light to cure the peripheral part after the step D and before the step F, the peripheral part not overlapping with the wafer in a plan view.

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First Claim