Method of measuring depth of damage of wafer

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United States of America Patent

PATENT NO 9857319
SERIAL NO

15025880

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Abstract

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The method of an embodiment includes the steps of: obtaining a first rocking curve with respect to a wafer obtained using an X-ray diffraction device; setting an X-ray incident angle range having a higher intensity than a reference level in the first rocking curve, calculating an inter-plane spacing for the set X-ray incident angle, calculating a strain value of the wafer using the calculated inter-plane spacing, and calculating sampled strain values on the basis of the calculated strain value; modeling a thickness according to the degree of damage of the wafer on the basis of the intensities of X-ray diffraction beams corresponding to the sampled strain values; obtaining a second rocking curve on the basis of the set X-ray incident angle range, the calculated inter-plane spacing, the sampled strain values and the modeled thickness; matching the second rocking curve to the first rocking curve by changing at least one of the X-ray incident angle range, the inter-plane spacing, the sampled strain values and the modeled thickness; and calculating the depth of damage of the wafer on the basis of the matching result.

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Patent Owner(s)

Patent OwnerAddress
LG SILTRON INCORPORATED53 IMSU-RO GUMI-SI GYEONGSANGBUK-DO 730-724

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Kyu Hyung Gumi-si, KR 4 2

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