INFRARED SENSOR MANUFACTURED BY METHOD SUITABLE FOR MASS PRODUCTION
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United States of America Patent
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app pub date -
Apr 28, 2016
filing date -
Feb 27, 2006
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Abandoned
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Abstract
An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
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