TERAHERTZ SOURCE CHIP, SOURCE DEVICE AND SOURCE ASSEMBLY, AND MANUFACTURING METHODS THEREOF
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United States of America Patent
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Aug 11, 2016
app pub date -
Sep 18, 2014
filing date -
Sep 18, 2013
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Abstract
The present invention provides a terahertz source chip, a source device, a source assembly and manufacturing methods thereof. The source chip comprises: a two-dimensional electron gas mesa; an electrode formed on the two-dimensional electron gas mesa for exciting a plasma wave; a terahertz resonant cavity formed below the two-dimensional electron gas mesa, the terahertz resonant cavity having a total reflector on a bottom surface thereof; and a grating formed on the two-dimensional electron gas mesa for coupling a plasma wave pattern with a cavity mode of the terahertz resonant cavity to generate terahertz radiation. In the present invention, a plasmon polariton is formed by strongly coupling the cavity mode of the terahertz resonant cavity with the plasma wave mode in the two-dimensional electron gas below the grating, and the terahertz wave emission is realized by electrical excitation of the plasmon polariton. In this way, a problem of low frequency or low operating temperature caused by generating the terahertz emission based on high-frequency oscillation of a single electron or quantum transition of a single electron is avoided, and the emission frequency band and the operating temperature range are widened.
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