Semiconductor device and related method of adjusting threshold voltage in semiconductor device during manufacture via counter doping in diffusion region
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United States of America Patent
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Oct 27, 2020
Grant Date -
Aug 11, 2016
app pub date -
Dec 3, 2014
filing date -
Dec 6, 2013
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Abstract
A semiconductor device includes a substrate (110); a buried layer (120) formed on the substrate (110), a diffusion layer (130) formed on the buried layer (120), wherein the diffusion layer (130) includes a first diffusion region (132) and a second diffusion region (134), and an impurity type of the second diffusion region (134) is opposite to an impurity type of the first diffusion region (132); the diffusion layer (134) further comprises a plurality of third diffusion regions (136) formed in the second diffusion region, wherein an impurity type of the third diffusion region (136) is opposite to the impurity type of the second diffusion region (134); and a gate (144) formed on the diffusion layer (130).
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