Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
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United States of America Patent
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Nov 22, 2016
Grant Date -
Aug 11, 2016
app pub date -
Feb 11, 2015
filing date -
Feb 11, 2015
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Abstract
The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.
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