GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
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United States of America Patent
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Issued Date -
Aug 4, 2016
app pub date -
Jan 27, 2016
filing date -
Jan 27, 2016
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Abstract
There is provided a Group III nitride semiconductor light-emitting device with a large light emission amount when a substrate has a rectangular shape. The light-emitting device comprises a rectangular substrate having a first long side, a second long side, a first short side, and a second short side; an n-type contact layer on the substrate; a plurality of n-dot electrodes ND on the n-type contact layer; a first line having a part of the n-dot electrodes ND arranged along the first long side; and a second line having a remaining part of the n-dot electrodes ND arranged along the second long side. A plurality of n-dot electrodes ND belong to either the first line or the second line. The n-dot electrodes ND belonging to the first line and the n-dot electrodes ND belonging to the second line are alternately arranged so as not to oppose each other.
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