Importance

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Abstract

Disclosed is a semiconductor structure, comprising: a semiconductor substrate and multilayer superfine silicon lines, wherein a profile shape of each of the multilayer superfine silicon lines is controlled dually by a crystal orientation of the substrate and an axial crystal orientation of the line. Also disclosed is a method of forming the same comprises: forming a fin-shaped silicon island (Fin) and a source-drain region on the two ends thereof via an etching process; preparing a corrosion shielding layer for silicon; and forming multilayer superfine silicon lines. The invention has the following advantages: the locations and the sectional shapes of the multilayer superfine silicon lines finally formed are uniform and controllable; the anisotropic corrosion for silicon stop automatically, the process window is large, and silicon lines with different diameters may be achieved from the same silicon wafer.

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First Claim