Importance

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Abstract

The invention relates to an apparatus for deposition of a III-V semiconductor layer comprising a process chamber (1), a susceptor (2) forming the base of the process chamber (1) for receiving one or more substrates to be coated, a heater (3) for heating the susceptor (2) to a process temperature and a gas inlet element (4) which comprises at least one first and one second process gas inlet zone (5, 6, 7), each for introducing process gases into the process chamber (1). It is proposed that the etching gas inlet (9) in the flow direction (23) of the hydride and the MO compound opens into the process chamber (1) downstream of the process gas inlet zones (5, 6, 7), wherein a control device (22) is adapted such that and the process gas inlet zones (5, 6, 7) and the etching gas inlet (9) are arranged such that the process gases emerging from the process gas inlet zones (5, 6, 7) cannot enter into the etching gas inlet (9) during deposition of the semiconductor layer and the etching gas emerging from the etching gas inlet (9) during purification of the process chamber cannot enter into the process gas inlet zones (5, 6, 7). The etching gas inlet (9) is formed by an annular zone of the process chamber cover around the gas inlet element (4) and by an annular fastening element (8) for fastening a cover plate (25).

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First Claim