Semiconductor devices and methods for manufacturing the same

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United States of America Patent

PATENT NO 9859434
APP PUB NO 20160218218A1
SERIAL NO

14914246

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Abstract

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Semiconductor devices and methods for manufacturing the same are provided. An example semiconductor device may include: a Semiconductor on Insulator (SOI) substrate, including a base substrate, a buried dielectric layer and an SOI layer, an active area disposed on the SOI substrate and including a first sub-area and a second sub-area, wherein the first sub-area includes a first fin portion, the second sub-area includes a second fin portion opposite to the first fin portion, and at least one of the first sub-area and the second sub-area includes a laterally extending portion; a back gate arranged between the first fin portion and the second fin portion; back gate dielectric layers sandwiched between the back gate and the respective fin portions; and a gate stack formed on the active area.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCESNO 3 BEITUCHENG WEST ROAD CHAOYANG DISTRICT BEIJING 100029

International Classification(s)

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  • 2013 Application Filing Year
  • H01L Class
  • 22267 Applications Filed
  • 20713 Patents Issued To-Date
  • 93.03 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2013201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhu, Huilong Poughkeepsie, US 705 13304

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  • 2 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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