METHOD OF FORMING FINE PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
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United States of America Patent
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Issued Date -
Jul 28, 2016
app pub date -
Sep 29, 2014
filing date -
Oct 22, 2013
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Abandoned
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Abstract
A fine pattern-forming method includes: a core pattern-forming step of forming a core pattern of a predetermined line width at a substrate surface side; a sidewall-forming step of forming a sidewall on the core pattern formed in the core pattern-forming step; and a core pattern removing step of removing the core pattern in a state where the sidewall is left, by using an etching gas after the sidewall-forming step, and is configured such that, in the core pattern removing step, a film deposited at a substrate back side in the core pattern-forming step is removed in parallel to the removal of the core pattern.
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