TRANSISTOR TESTING CIRCUIT AND METHOD THEREOF, SEMICONDUCTOR MEMORY APPARATUS AND SEMICONDUCTOR APPARATUS
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United States of America Patent
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Issued Date -
Jul 28, 2016
app pub date -
Jun 17, 2015
filing date -
Jun 17, 2015
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Abstract
A transistor testing circuit for measuring a breakdown voltage of a transistor included in a semiconductor apparatus with high accuracy for each chip is provided. The transistor testing circuit is disposed on a semiconductor chip to measure the breakdown voltage of a MOS transistor. The transistor testing circuit includes: a voltage applying apparatus, a current detecting circuit, a current mirror voltage outputting circuit, and a comparator circuit. The voltage applying apparatus applies a predetermined testing voltage to at least one of a drain, a source, and a gate of the MOS transistor. When the testing voltage is applied, the current detecting circuit detects a current flowing from the MOS transistor to a load circuit. The current mirror voltage outputting circuit generates a mirror current corresponding to the detected current and outputs the same. The comparator circuit compares the mirror current with a predetermined reference current to output a comparison result signal.
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