TRENCH LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
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United States of America Patent
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Issued Date -
Jul 21, 2016
app pub date -
Jan 21, 2015
filing date -
Jan 21, 2015
priority date (Note) -
Abandoned
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Abstract
A trench lateral diffusion metal oxide semiconductor (LDMOS) device, disposed on a substrate, comprising: a transistor and an LDMOS transistor. The transistor has a gate. The LDMOS transistor has a trench gate, wherein the trench gate protrudes from a surface of the substrate. Electrical connection of the trench gate and a doping region due to a metal silicide may be prevented by protruding the trench gate from the surface of the substrate. And furthermore a step height difference between a gate and the trench gate may be decreased, and openings respectively exposing a top portion of the trench gate and a top portion of the gate may be formed without changing the manufacturing conditions.
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