Epitaxial Channel Transistors and Die With Diffusion Doped Channels
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 21, 2016
app pub date -
Mar 28, 2016
filing date -
Mar 28, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Semiconductor structures can be fabricated by implanting a screen layer into a substrate, with the screen layer formed at least in part from a low diffusion dopant species. An epitaxial channel of silicon or silicon germanium is formed above the screen layer, and the same or different dopant species is diffused from the screen layer into the epitaxial channel layer to form a slightly depleted channel (SDC) transistor. Such transistors have inferior threshold voltage matching characteristics compared to deeply depleted channel (DDC) transistors, but can be more easily matched to legacy doped channel transistors in system on a chip (SoC) or multiple transistor semiconductor die.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully