SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jul 21, 2016
app pub date -
Jul 24, 2014
filing date -
Sep 12, 2013
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Abstract
A silicon carbide semiconductor device capable of achieving a high current gain with a simplified construction is provided. A silicon carbide layer includes a collector region, a base region, and an emitter region. The silicon carbide layer is provided with a trench having a sidewall surface reaching the base region from a first main surface through the emitter region. The sidewall surface includes a region macroscopically having an angle not smaller than 50° and not greater than 70° with respect to a {000-1} plane. A manufacturing method includes the step of forming a trench. The step of forming a trench includes the step of chemically treating the first main surface of the silicon carbide layer for forming the region.
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