SEMICONDUCTOR DEVICE WITH AT LEAST ONE TRUNCATED CORNER AND/OR SIDE CUT-OUT
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United States of America Patent
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Issued Date -
Jul 21, 2016
app pub date -
Jan 8, 2016
filing date -
Jan 17, 2015
priority date (Note) -
Abandoned
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Abstract
A method of producing a substantially rectangular semiconductor device having at least one corner truncation or corner cut-out or side cut-out, comprises: a) providing a semiconductor substrate; b) making at least one opening through the substrate by means of etching; and c) cutting the substrate along a first pair of parallel lines, and along a second pair of parallel lines perpendicular to the first pair. At least one line of the first/second pair passes through said opening. Two lines may pass through said opening. More than one opening may be provided for said device. The opening may be located at a corner or on a side of the otherwise rectangular device. The etching may be any combination of existing isotropic/anisotropic front/back etching techniques.
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