SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

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United States of America Patent

APP PUB NO 20160211209A1
SERIAL NO

14672238

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Abstract

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A semiconductor structure and a method for fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate, a plurality of composite layers, and at least one composite pillar. The substrate includes a first region and a second region. The composite layers are disposed on the substrate. Each of the composite layers includes at least one exposed surface and at least one sidewall. At least one staircase structure is formed by the exposed surface and the sidewall. The composite pillar is disposed on the exposed surface of the substrate.

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Patent Owner(s)

Patent OwnerAddress
POWERCHIP TECHNOLOGY CORPORATIONNO 12 LI-HSIN RD I SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Hung Hsinchu County, TW 246 1469
Chiu, Ta-Chien Miaoli County, TW 5 16
Chu, Chien-Lung Hsinchu City, TW 13 75
Wu, Hsin-Min Hsinchu City, TW 1 3

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