METHOD FOR ETCHING GROUP III-V SEMICONDUCTOR AND APPARATUS FOR ETCHING THE SAME
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United States of America Patent
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Jul 21, 2016
app pub date -
Jan 19, 2016
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Jan 20, 2015
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Abstract
Disclosed is a method for etching a group III-V semiconductor, including irradiating, under an atmosphere of an organic gas, neutral particles to a group III-V semiconductor layer formed on a substrate to cause a complex reaction, thereby etching the group III-V semiconductor layer.
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