METHOD FOR DOPING SILICON SHEETS

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United States of America Patent

APP PUB NO 20160204299A1
SERIAL NO

14777798

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Abstract

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A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method comprising the steps consisting in:

    performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer;forming an oxide layer (40) on the partially doped surface (10); andperforming a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer.

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Patent Owner(s)

Patent OwnerAddress
ION BEAM SERVICESZI PEYNIER-ROUSSET RUE GASTON IMBERT PROLONGÉE PEYNIER F-13790

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BECHEVET, Bernard Habere-Poche, FR 21 171
JOURDAN, Johann Chambery, FR 3 0

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