COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR DEVICE AND METHOD OF FORMING THE SAME
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United States of America Patent
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Jul 14, 2016
app pub date -
Jan 12, 2015
filing date -
Jan 12, 2015
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Abstract
The present invention relates to a CMOS image sensor device and a method of forming the same. The CMOS image sensor device includes a substrate, a deep trench isolation (DTI), a photodiode, an electrode and an interface region. The DTI and the photodiode are both disposed in the substrate. The electrode is disposed on the DTI. The interface region is formed adjacent to the DTI.
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