THIN-FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 14, 2016
app pub date -
May 20, 2014
filing date -
Aug 27, 2013
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A TFT substrate includes: a substrate; a gate electrode above the substrate; an oxide semiconductor layer above the substrate; a gate insulating film between the gate electrode and the oxide semiconductor layer; a source electrode and a drain electrode which are connected to the oxide semiconductor layer; oxide films on the surface of the source electrode and the surface of the drain electrode, respectively; a first protective film covering the oxide films; a first interconnect layer connected to the source electrode and the drain electrode via respective first contact holes extending through the first protective film and the oxide films; wherein the source electrode and the drain electrode are each a laminated film including a Cu film and a Cu—Mn alloy film formed on the Cu film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully