Method of fabricating three-dimensional semiconductor devices, and three-dimensional semiconductor devices thereof
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United States of America Patent
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Issued Date -
Jul 14, 2016
app pub date -
Jan 13, 2015
filing date -
Jan 13, 2015
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Abandoned
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Abstract
Present example embodiments relate generally to semiconductor devices and methods of fabricating a semiconductor device comprising providing a substrate and forming a plurality of layers over the substrate. The plurality of layers comprise alternating first composition material layers and second composition material layers. The method further comprises forming an elongated post. The post extends from at least the top surface of the substrate.
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