METHOD AND ION IMPLANTER FOR LOW TEMPERATURE IMPLANTATION

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United States of America Patent

APP PUB NO 20160203950A1
SERIAL NO

14595813

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Abstract

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A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED ION BEAM TECHNOLOGY INC5F NO 18 CREATION ROAD 1 SCIENCE PARK HSIN-CHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HUSAIN, Anwar Pleasanton, US 43 477
SHENG, Tienyu Saratoga, US 6 11
YIIN, Tzuyuan Fremont, US 3 11

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