Method for producing gallium nitride crystal by reacting metal gallium and iron nitride

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9890471
SERIAL NO

14916055

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

[Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
DEXERIALS CORPORATIONTOCHIGI

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Shinya Tokyo, JP 5 1
Matsumoto, Tatsuya Tokyo, JP 42 395
Watanabe, Makoto Tokyo, JP 386 3408

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Aug 13, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Aug 13, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00