Substrate Processing Apparatus, Gas Dispersion Unit, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium

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United States of America Patent

APP PUB NO 20160201193A1
SERIAL NO

14669982

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Characteristics of a film formed on a substrate and a manufacturing throughput can be improved. A substrate processing apparatus includes a process chamber configured to process a substrate; a substrate placement unit; and a gas dispersion unit, the gas dispersion unit including: a first supply region facing the substrate and including a first gas dispersion hole configured to supply a first gas and a second gas dispersion hole configured to supply a second gas; and a second supply region facing a portion of a surface of the substrate placement unit outer than a portion of the surface of the substrate placement unit occupied by the substrate and including a third gas dispersion hole having a diameter greater than that of the second gas dispersion hole and configured to supply the second gas.

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Patent Owner(s)

Patent OwnerAddress
HITACHI KOKUSAI ELECTRIC INCTOKYO 105-8039

International Classification(s)

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  • 2015 Application Filing Year
  • C23C Class
  • 3009 Applications Filed
  • 2118 Patents Issued To-Date
  • 70.39 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SAIDO, Shuhei Toyama, JP 62 1449

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Patent Citation Ranking

  • 6 Citation Count
  • C23C Class
  • 18.59 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges27293913750251255742501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0501001502002503003504004505005506006507007508008509009501000

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