METHOD OF MANUFACTURING A PHOTOELECTRIC AND THERMOELECTRIC SENSOR, AND PHOTOELECTRIC AND THERMOELECTRIC SENSOR

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United States of America Patent

APP PUB NO 20160197211A1
SERIAL NO

14818381

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Abstract

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A method of manufacturing a photoelectric and thermoelectric sensor includes the steps of: preparing a silicon substrate and an etching solution that includes hydrofluoric acid, isopropyl alcohol and deionized water; performing electrochemical etching on the silicon substrate in the etching solution to obtain a porous silicon substrate; and forming on the porous silicon substrate an electrode unit that is connected to the porous silicon substrate and that is adapted for being connected to an external circuit.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL CHI NAN UNIVERSITYNO 1 UNIVERSITY RD PULI NANTOU 545

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Chin-Kai Puli, TW 10 38
CHENG, Sheng-Lin Puli, TW 1 1
HSIAO, Kuei-Sen Puli, TW 4 1
TSAI, Chao-Yang Puli, TW 4 18

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