EPITAXIAL REACTOR
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United States of America Patent
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Issued Date -
Jul 7, 2016
app pub date -
Aug 8, 2014
filing date -
Aug 8, 2014
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Abstract
An embodiment comprises a reacting chamber; a susceptor which is located in the reacting chamber and seats a wafer therein; and a gas flow controller for controlling the flow of gas introduced in the reacting chamber, wherein the gas flow controller includes an inject cap having a plurality of gas outlets for separating the flow of gas and includes a plurality of baffles having through-holes corresponding to the plurality of gas outlets, respectively, and the plurality of baffles are separated from each other, and each of the baffles is disposed adjacently to a corresponding gas outlet among the plurality of gas outlets.
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