Importance

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Abstract

The present invention provides a photodetector, which comprises a substrate, a gate metal layer, an isolation layer, a transport layer, an insulating layer, an optoelectronic device, and a common metal layer. The gate metal layer is disposed on the substrate; the isolation layer is disposed on the gate metal layer and the substrate; the transport layer is disposed on the isolation layer; the insulating layer is disposed on the transport layer; the optoelectronic device is disposed on the transport layer but not on the gate metal layer; and the common metal layer is disposed on the optoelectronic device. In an etch-back process for removing the common metal layer, the transport layer cannot be removed. Alternatively, in another etch-back process for removing the transport layer, the isolation layer, and the layers and device on the isolation layer, the gate metal layer cannot be removed.

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First Claim