SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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app pub date -
Mar 7, 2016
filing date -
Apr 22, 2010
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Abstract
A semiconductor device includes a first capacitive insulating film, a semiconductor region, a gate insulating film, and a gate electrode. The semiconductor region has a groove. The gate insulating film covers a surface of the groove. The gate electrode is in the groove. The gate electrode includes first and second conductive films. The first conductive film is in contact with the gate insulating film. The first conductive film has an upper surface which is higher than a close portion of the second conductive film. The close portion is closer to the upper surface of the first conductive film.
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