SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20160189999A1
SERIAL NO

14582918

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Abstract

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Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a plurality of stacked structures and a dielectric layer. The stacked structures are disposed on a substrate. The dielectric layer is disposed on the substrate, and covers the stacked structures. An air gap is located between two adjacent stacked structures, and a top end of the air gap is higher than a top end of each of the stacked structures.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Chia-Wen Hsinchu, TW 14 41

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