DOPING METHOD AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
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United States of America Patent
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Jun 30, 2016
app pub date -
Dec 21, 2015
filing date -
Dec 21, 2015
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Disclosed is a method of performing doping by implanting a dopant to a processing target substrate. First, in an oxide film forming step, an oxide film is formed on the processing target substrate prior to performing a doping treatment. In addition, after the oxide film is formed on the processing target substrate, a plasma doping treatment is performed from a top of the oxide film after the oxide film forming step.
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