METHODS OF PERFORMING SEMICONDUCTOR GROWTH USING REUSABLE CARRIER SUBSTRATES AND RELATED CARRIER SUBSTRATES
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United States of America Patent
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Issued Date -
Jun 30, 2016
app pub date -
Dec 31, 2014
filing date -
Dec 31, 2014
priority date (Note) -
Abandoned
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Abstract
Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.
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