SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS WITH BEAM DECELARATION
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United States of America Patent
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Issued Date -
Jun 30, 2016
app pub date -
Dec 28, 2015
filing date -
Dec 26, 2014
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Abstract
An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
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